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Power F-MOS FETs
2SK2130
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = 30V guaranteed q High-speed switching: tf = 45ns q No secondary breakdown
unit: mm
4.60.2 3.20.1 9.90.3 2.90.2
s Applications
4.10.2 8.00.2 Solder Dip
13.7-0.2
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.00.3
3.00.2
+0.5
1.20.15 1.450.15 0.750.1 2.540.2 5.080.4
2.60.1 0.70.1
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 30 3 6 15 50 2 150 -55 to +150 Unit V V A A mJ W C C
7
123
1: Gate 2: Drain 3: Source TO-220E Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) VGS = 10V, ID = 2A VDD = 200V, RL = 100 Conditions VDS = 720V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A IDR = 3A, VGS = 0 600 VDS = 20V, VGS = 0, f = 1MHz 90 30 40 40 45 100 2.5 1.5 900 2 3.8 2.2 -1.6 5 5 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns ns C/W
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case
1
Power F-MOS FETs
Area of safe operation (ASO)
100 60
2SK2130
PD Ta
Avalanche energy capacity EAS (mJ)
EAS Tj
24 VDD=50V ID=3A 20
Allowable power dissipation PD (W)
Non repetitive pulse TC=25C
50
(1) TC=Ta (2) Without heat sink (PD=2W)
Drain current ID (A)
10 I DP ID
t=100s
40 (1) 30
16
1
1ms 10ms DC
12
20
8
0.1
10 (2)
4
0.01 1 10 100 1000
0 0 20 40 60 80 100 120 140 160
0 25
50
75
100
125
150
175
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
Junction temperature Tj (C)
ID VDS
4 VGS=15V 10V 4 5
ID VGS
6 VDS=25V
Vth TC
VDS=25V ID=1mA 5
Drain current ID (A)
6V
Drain current ID (A)
3
Gate threshold voltage Vth (V)
10 12
3
TC=0C 25C
4
150C 100C
2
5.5V
3
2
5V 1 50W 4.5V 0 0 10 20 30 40 50 60
2
1
1
0 0 2 4 6 8
0 0 25 50 75 100 125 150
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Case temperature TC (C)
VDS VGS
Drain to source ON-resistance RDS(on) ()
80 TC=25C 10
RDS(on) ID
4.0
| Yfs | ID
Forward transfer admittance |Yfs| (S)
VGS=10V VDS=25V TC=25C
Drain to source voltage VDS (V)
70 60 50 40 30 20 3A 10 0 0 5 10 15 20 1.5A 0.75A 25 30 ID=6A
TC=150C 8 100C 6
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
4
25C 0C
2
0 0 1 2 3 4 5
0
1
2
3
4
Gate to source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
2
Power F-MOS FETs
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000 f=1MHz TC=25C 1000
2SK2130
VDS, VGS Qg
ID=3A TC=25C 20 250
td(on), tr, tf, td(off) ID
VDD=200V VGS=10V TC=25C 200
800
16
1000 Ciss
600
Switching time td(on),tr,tf,td(off) (ns)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
12
150
100 Coss Crss 10
400
VDS
8 VGS
100
td(off) tf tr td(on)
200
4
50
1 0 50 100 150 200 250
0 0 10 20 30 40
0 50
0 0 1 2 3 4 5
Drain to source voltage VDS (V)
Gate charge amount Qg (nC)
Drain current ID (A)
3

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